Strain analysis of SiNWs–GQDs core–shell heterostructures

Strain relaxation in InAs/GaSb heterostructures

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Ultrafast strain engineering in complex oxide heterostructures.

We report on ultrafast optical experiments in which femtosecond midinfrared radiation is used to excite the lattice of complex oxide heterostructures. By tuning the excitation energy to a vibrational mode of the substrate, a long-lived five-order-of-magnitude increase of the electrical conductivity of NdNiO(3) epitaxial thin films is observed as a structural distortion propagates across the int...

Relaxation of Misfit-Induced Strain in Semiconductor Heterostructures

Using examples from SiGe solid solutions grown onto (001)Si substrates from metallic solutions (liquid phase epitaxy) we discuss the different mechanisms by which misfitting systems can relax the strain caused by pseudomorphic growth. We treat elastic, plastic and diffusive relaxation and their interdependence. As an extension we discuss additional relaxation mechanisms, though possibly not ver...

Strain engineering via amorphization and recrystallization in Si/Ge heterostructures

Strain measurement in semiconductor heterostructures by scanning transmission electron microscopy.

This article deals with the measurement of strain in semiconductor heterostructures from convergent beam electron diffraction patterns. In particular, three different algorithms in the field of (circular) pattern recognition are presented that are able to detect diffracted disc positions accurately, from which the strain in growth direction is calculated. Although the three approaches are very ...